Effects of annealing on the performance of InP/InGaAs HBTs grown by LP-MOCVD

Q. J. Hartmann; M. T. Fresina; D. A. Ahmari; S. A. Stockman; J. E. Baker; D. Barlage; H. Hwangbo; A. Yung; M. Feng; G. E. Stillman

Effects of annealing on the performance of InP/InGaAs HBTs grown by LP-MOCVD

Q. J. Hartmann, M. T. Fresina, D. A. Ahmari, S. A. Stockman, J. E. Baker, D. Barlage, H. Hwangbo, A. Yung, M. Feng, G. E. Stillman

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effects of rapid thermal annealing on InP/InGaAs heterojunction bipolar transistors with a carbon doped base have been studied. A 10 minute anneal at 590 °C under N₂ completely eliminates hydrogen from the base. By using shorter anneals and/or lower temperatures, the dc current gain and rf device performance are studied as a function of the base hydrogen concentration. The base sheet resistance decreases with annealing time as does the dc current gain. The maximum frequency of oscillation increases as the base resistance decreases. The unity current-gain cutoff frequency is significantly enhanced by removing hydrogen despite the resulting increase in the base hole concentration.

Original language	English (US)
Pages (from-to)	505-508
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 1997
Event	Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA Duration: May 11 1997 → May 15 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Effects of annealing on the performance of InP/InGaAs HBTs grown by LP-MOCVD",

abstract = "The effects of rapid thermal annealing on InP/InGaAs heterojunction bipolar transistors with a carbon doped base have been studied. A 10 minute anneal at 590 °C under N2 completely eliminates hydrogen from the base. By using shorter anneals and/or lower temperatures, the dc current gain and rf device performance are studied as a function of the base hydrogen concentration. The base sheet resistance decreases with annealing time as does the dc current gain. The maximum frequency of oscillation increases as the base resistance decreases. The unity current-gain cutoff frequency is significantly enhanced by removing hydrogen despite the resulting increase in the base hole concentration.",

author = "Hartmann, {Q. J.} and Fresina, {M. T.} and Ahmari, {D. A.} and Stockman, {S. A.} and Baker, {J. E.} and D. Barlage and H. Hwangbo and A. Yung and M. Feng and Stillman, {G. E.}",

year = "1997",

language = "English (US)",

pages = "505--508",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials ; Conference date: 11-05-1997 Through 15-05-1997",

}

TY - JOUR

T1 - Effects of annealing on the performance of InP/InGaAs HBTs grown by LP-MOCVD

AU - Hartmann, Q. J.

AU - Fresina, M. T.

AU - Ahmari, D. A.

AU - Stockman, S. A.

AU - Baker, J. E.

AU - Barlage, D.

AU - Hwangbo, H.

AU - Yung, A.

AU - Feng, M.

AU - Stillman, G. E.

PY - 1997

Y1 - 1997

N2 - The effects of rapid thermal annealing on InP/InGaAs heterojunction bipolar transistors with a carbon doped base have been studied. A 10 minute anneal at 590 °C under N2 completely eliminates hydrogen from the base. By using shorter anneals and/or lower temperatures, the dc current gain and rf device performance are studied as a function of the base hydrogen concentration. The base sheet resistance decreases with annealing time as does the dc current gain. The maximum frequency of oscillation increases as the base resistance decreases. The unity current-gain cutoff frequency is significantly enhanced by removing hydrogen despite the resulting increase in the base hole concentration.

AB - The effects of rapid thermal annealing on InP/InGaAs heterojunction bipolar transistors with a carbon doped base have been studied. A 10 minute anneal at 590 °C under N2 completely eliminates hydrogen from the base. By using shorter anneals and/or lower temperatures, the dc current gain and rf device performance are studied as a function of the base hydrogen concentration. The base sheet resistance decreases with annealing time as does the dc current gain. The maximum frequency of oscillation increases as the base resistance decreases. The unity current-gain cutoff frequency is significantly enhanced by removing hydrogen despite the resulting increase in the base hole concentration.

UR - http://www.scopus.com/inward/record.url?scp=0030677223&partnerID=8YFLogxK

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M3 - Conference article

AN - SCOPUS:0030677223

SN - 1092-8669

SP - 505

EP - 508

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials

Y2 - 11 May 1997 through 15 May 1997

ER -

Effects of annealing on the performance of InP/InGaAs HBTs grown by LP-MOCVD

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