Effects of annealing on the performance of InP/InGaAs HBTs grown by LP-MOCVD

Q. J. Hartmann, M. T. Fresina, D. A. Ahmari, S. A. Stockman, J. E. Baker, D. Barlage, H. Hwangbo, A. Yung, M. Feng, G. E. Stillman

Research output: Contribution to journalConference articlepeer-review

Abstract

The effects of rapid thermal annealing on InP/InGaAs heterojunction bipolar transistors with a carbon doped base have been studied. A 10 minute anneal at 590 °C under N2 completely eliminates hydrogen from the base. By using shorter anneals and/or lower temperatures, the dc current gain and rf device performance are studied as a function of the base hydrogen concentration. The base sheet resistance decreases with annealing time as does the dc current gain. The maximum frequency of oscillation increases as the base resistance decreases. The unity current-gain cutoff frequency is significantly enhanced by removing hydrogen despite the resulting increase in the base hole concentration.

Original languageEnglish (US)
Pages (from-to)505-508
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
StatePublished - Jan 1 1997
EventProceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA
Duration: May 11 1997May 15 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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