Effect of variations in diameter and density on the statistics of aligned array carbon-nanotube field effect transistors

Ahmad E. Islam, Frank Du, Xinning Ho, Sung Hun Jin, Simon Dunham, John A. Rogers

Research output: Contribution to journalArticle

Abstract

This paper describes a systematic experimental and theoretical analysis of performance variations in transistors that use aligned arrays of single-wall carbon nanotubes (SWNTs) grown on quartz substrates. Theoretical models, calibrated using measurements on statistically relevant numbers of transistors that each incorporate an individual aligned semiconducting SWNT, enable separate examination of different contributors to measured variations in transistors that incorporate arrays of SWNTs. Using these models and associated experiments, we study the scaling of the statistics of key performance attributes in transistors with different numbers of incorporated SWNTs and reveal long-range spatial nonuniformities in the distributions of SWNT diameters as the main contributor to observed performance variability.

Original languageEnglish (US)
Article number054511
JournalJournal of Applied Physics
Volume111
Issue number5
DOIs
StatePublished - Mar 1 2012

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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