The effect of annealing on hole and electron mobility in dual-channel structures which consisted of strained Si and Si 1-yGe y on relaxed Si 1-xGe y layers (x<y) were investigated. It was observed that the hole mobility was decreased in dual-channel structures with higher Ge contents. The electron mobility was found to be immune to annealing conditions of 800°c, 30 min or 900°C, 15s. It was also observed from secondary ion mass spectrometry and simulation that the degradation of hole mobility was due to the outdiffusion of Ge from the Si 1-yGe y layer, and the decreased Ge content.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)