Effect of thermal processing on mobility in strained Si/strained Si 1-yGe y on relaxed Si 1-xGe x(x<y) virtual substrates

Jongwan Jung, Shaofeng Yu, Oluwamuyiwa Oluwagbemiga Olubuyide, Judy L. Hoyt, Dimitri A. Antoniadis, Minjoo L. Lee, Eugene A. Fitzgerald

Research output: Contribution to journalArticlepeer-review

Abstract

The effect of annealing on hole and electron mobility in dual-channel structures which consisted of strained Si and Si 1-yGe y on relaxed Si 1-xGe y layers (x<y) were investigated. It was observed that the hole mobility was decreased in dual-channel structures with higher Ge contents. The electron mobility was found to be immune to annealing conditions of 800°c, 30 min or 900°C, 15s. It was also observed from secondary ion mass spectrometry and simulation that the degradation of hole mobility was due to the outdiffusion of Ge from the Si 1-yGe y layer, and the decreased Ge content.

Original languageEnglish (US)
Pages (from-to)3319-3321
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number17
DOIs
StatePublished - Apr 26 2004
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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