Abstract
We have investigated the effect of the post-deposition processing ambient on the preparation of YBa2Cu3O7-x thin films from a BaF2 source. The role of H2O vapor during the high-temperature anneal is understood through a thermodynamic analysis of the fluorine removal reaction. The role of a HF getter (e.g., SiO2) is understood through the same type of analysis. We have demonstrated that a zero resistance transition temperature at 77 K can be obtained for an annealing temperature as low as 690°C for films deposited on SrTiO3 substrates by increasing the PH2O and decreasing PHF during the high-temperature soak cycle.
Original language | English (US) |
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Pages (from-to) | 1443-1445 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 53 |
Issue number | 15 |
DOIs | |
State | Published - 1988 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)