Effect of the electron temperature on the gate-induced charge in small size mos transistors

In the Gradual Channel Approximation (GCA) a simple model describing the carrier heating in the Si inversion layer is presented. This model is based on the classical expression for the free carrier concentration which, in the channel, is characterized by an electron temperature T_{rm{approaches the limit}} With increasing T_rme the mean distance of the electrons in the inversion layer moves from the interface into the bulk. This effect increases with decreasing electron concentration. An additional effect is the lowering of the gate-induced charge which is small size transistor devices can reach important limits and can lead to the reduction of the transistor power.