Effect of the electron temperature on the gate-induced charge in small size mos transistors

J. P. Leburton, G. Dorda

Research output: Contribution to journalArticlepeer-review

Abstract

In the Gradual Channel Approximation (GCA) a simple model describing the carrier heating in the Si inversion layer is presented. This model is based on the classical expression for the free carrier concentration which, in the channel, is characterized by an electron temperature Trm{approaches the limit} With increasing Trme the mean distance of the electrons in the inversion layer moves from the interface into the bulk. This effect increases with decreasing electron concentration. An additional effect is the lowering of the gate-induced charge which is small size transistor devices can reach important limits and can lead to the reduction of the transistor power.

Original languageEnglish (US)
Pages (from-to)611-615
Number of pages5
JournalSolid State Electronics
Volume26
Issue number6
DOIs
StatePublished - Jun 1983
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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