Abstract
The effects of surface orientation on growth from the vapor phase and properties of Cu(ln,Ga)Se2 on GaAs (001), (111)B, (111)A, and (110) are discussed. Faceting was observed on CIGS on GaAs (110), resulting in two polar {112} facet types with strikingly different surface morphologies. The {112}Se surface is assigned as the growth front, while growth on {112}Metal planes is relatively slow. A study of CIGS on GaAs (111)A and (111)8 substrates was carried out and we present a growth model based on the results. The possible surface reconstructions, chemical compositions and the electronic structures of the two {112} surfaces have been investigated and are discussed in the context of CdS/CIGS interfaces and device performances.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 515-518 |
| Number of pages | 4 |
| Journal | Conference Record of the IEEE Photovoltaic Specialists Conference |
| State | Published - 2002 |
| Event | 29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: May 19 2002 → May 24 2002 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering