Effect of surface orientation on the growth and properties of Cu(In,Ga)Se2

Dongxiang Liao, Angus Rockett

Research output: Contribution to journalConference articlepeer-review

Abstract

The effects of surface orientation on growth from the vapor phase and properties of Cu(ln,Ga)Se2 on GaAs (001), (111)B, (111)A, and (110) are discussed. Faceting was observed on CIGS on GaAs (110), resulting in two polar {112} facet types with strikingly different surface morphologies. The {112}Se surface is assigned as the growth front, while growth on {112}Metal planes is relatively slow. A study of CIGS on GaAs (111)A and (111)8 substrates was carried out and we present a growth model based on the results. The possible surface reconstructions, chemical compositions and the electronic structures of the two {112} surfaces have been investigated and are discussed in the context of CdS/CIGS interfaces and device performances.

Original languageEnglish (US)
Pages (from-to)515-518
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
StatePublished - Dec 1 2002
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: May 19 2002May 24 2002

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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