Effect of substrate effcut angle on AlGaInP and GaInP solar cells grown by molecular beam epitaxy

Taizo Masuda, Stephanie Tomasulo, Jordan R. Lang, Minjoo Larry Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have studied characteristics of ∼2.0 eV AlGaInP and ∼1.9 eV GaInP solar cells on misoriented GaAs substrates grown by molecular beam epitaxy (MBE). Lattice-matched AlGaInP solar cells are of interest for space and concentrator photovoltaics, but there have been relatively few reports on such cells grown by MBE. Open circuit voltages for GaInP cells ranged from 1.29-1.30 V, while AlGaInP cells ranged from 1.35-1.37 V. The bandgap-voltage offset (Woc) of GaInP cells decreased from ∼575 mV to ∼565 mV as misorientation angle increased from 0° to 10°, while Woc for AlGaInP cells remained nearly constant at 620 mV. Internal quantum efficiency (IQE) measurements show that current collection for AlGaInP cells is lower than in GaInP and indicates the need for a thinner emitter with good surface passivation; no trend in IQE was observed as a function of offcut. Although Woc for AlGaInP was slightly higher than in GaInP, we believe that further optimization will allow MBE-grown AlGaInP to be a promising candidate for future top cell applications.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages505-509
Number of pages5
ISBN (Electronic)9781479943982
DOIs
StatePublished - Oct 15 2014
Externally publishedYes
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Keywords

  • AlGaInP
  • GaInP
  • MBE
  • photovoltaic cells
  • wide bandgap

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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