Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb long-infrared photodetector array

G. Chen, A. M. Hoang, S. Bogdanov, A. Haddadi, S. R. Darvish, M. Razeghi

Research output: Contribution to journal › Article › peer-review

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Physics & Astronomy