Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb long-infrared photodetector array

G. Chen; A. M. Hoang; S. Bogdanov; A. Haddadi; S. R. Darvish; M. Razeghi

doi:10.1063/1.4833026

Effect of sidewall surface recombination on the quantum efficiency in a Y₂O₃ passivated gated type-II InAs/GaSb long-infrared photodetector array

G. Chen, A. M. Hoang, S. Bogdanov, A. Haddadi, S. R. Darvish, M. Razeghi

Research output: Contribution to journal › Article › peer-review

Abstract

Y₂O₃ was applied to passivate a long-wavelength infrared type-II superlattice gated photodetector array with 50% cut-off wavelength at 11 μm, resulting in a saturated gate bias that was 3 times lower than in a SiO₂ passivated array. Besides effectively suppressing surface leakage, gating technique exhibited its ability to enhance the quantum efficiency of 100 × 100 μm size mesa from 51% to 57% by suppressing sidewall surface recombination. At 77 K, the gated photodetector showed dark current density and resistance-area product at -300 mV of 2.5 × 10^-5 A/cm² and 1.3 × 10⁴ Ω cm², respectively, and a specific detectivity of 1.4 × 10 ¹² Jones.

Original language	English (US)
Article number	223501
Journal	Applied Physics Letters
Volume	103
Issue number	22
DOIs	https://doi.org/10.1063/1.4833026
State	Published - Nov 25 2013
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.4833026

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@article{d66d08063905400e96ca6ada9b402fae,

title = "Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb long-infrared photodetector array",

abstract = "Y2O3 was applied to passivate a long-wavelength infrared type-II superlattice gated photodetector array with 50% cut-off wavelength at 11 μm, resulting in a saturated gate bias that was 3 times lower than in a SiO2 passivated array. Besides effectively suppressing surface leakage, gating technique exhibited its ability to enhance the quantum efficiency of 100 × 100 μm size mesa from 51% to 57% by suppressing sidewall surface recombination. At 77 K, the gated photodetector showed dark current density and resistance-area product at -300 mV of 2.5 × 10-5 A/cm2 and 1.3 × 104 Ω cm2, respectively, and a specific detectivity of 1.4 × 10 12 Jones.",

author = "G. Chen and Hoang, {A. M.} and S. Bogdanov and A. Haddadi and Darvish, {S. R.} and M. Razeghi",

note = "Funding Information: The authors acknowledge the support, interest, scientific discussion, and encouragement of Dr. Fenner Milton, Dr. Meimei Tidrow, Dr. Joseph Pellegrino, and Dr. Sumith Bandara from the U.S. Army Night Vision Laboratory, Dr. William Clark, Dr. Priyalal Wijewarnasuriya, and Dr. Eric DeCuir, Jr. from U.S. Army Research Laboratory, Dr. Nibir Dhar from DARPA, and Dr. Murzy Jhabvala from NASA Goddard Space Flight Center.",

year = "2013",

month = nov,

day = "25",

doi = "10.1063/1.4833026",

language = "English (US)",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb long-infrared photodetector array

AU - Chen, G.

AU - Hoang, A. M.

AU - Bogdanov, S.

AU - Haddadi, A.

AU - Darvish, S. R.

AU - Razeghi, M.

N1 - Funding Information: The authors acknowledge the support, interest, scientific discussion, and encouragement of Dr. Fenner Milton, Dr. Meimei Tidrow, Dr. Joseph Pellegrino, and Dr. Sumith Bandara from the U.S. Army Night Vision Laboratory, Dr. William Clark, Dr. Priyalal Wijewarnasuriya, and Dr. Eric DeCuir, Jr. from U.S. Army Research Laboratory, Dr. Nibir Dhar from DARPA, and Dr. Murzy Jhabvala from NASA Goddard Space Flight Center.

PY - 2013/11/25

Y1 - 2013/11/25

N2 - Y2O3 was applied to passivate a long-wavelength infrared type-II superlattice gated photodetector array with 50% cut-off wavelength at 11 μm, resulting in a saturated gate bias that was 3 times lower than in a SiO2 passivated array. Besides effectively suppressing surface leakage, gating technique exhibited its ability to enhance the quantum efficiency of 100 × 100 μm size mesa from 51% to 57% by suppressing sidewall surface recombination. At 77 K, the gated photodetector showed dark current density and resistance-area product at -300 mV of 2.5 × 10-5 A/cm2 and 1.3 × 104 Ω cm2, respectively, and a specific detectivity of 1.4 × 10 12 Jones.

AB - Y2O3 was applied to passivate a long-wavelength infrared type-II superlattice gated photodetector array with 50% cut-off wavelength at 11 μm, resulting in a saturated gate bias that was 3 times lower than in a SiO2 passivated array. Besides effectively suppressing surface leakage, gating technique exhibited its ability to enhance the quantum efficiency of 100 × 100 μm size mesa from 51% to 57% by suppressing sidewall surface recombination. At 77 K, the gated photodetector showed dark current density and resistance-area product at -300 mV of 2.5 × 10-5 A/cm2 and 1.3 × 104 Ω cm2, respectively, and a specific detectivity of 1.4 × 10 12 Jones.

UR - http://www.scopus.com/inward/record.url?scp=84888584306&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84888584306&partnerID=8YFLogxK

U2 - 10.1063/1.4833026

DO - 10.1063/1.4833026

M3 - Article

AN - SCOPUS:84888584306

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223501

ER -