Effect of selenium evaporation rate on ultrathin Cu(In,Ga)Se2 films

Krishna Aryal, Grace Rajan, Tasnuva Ashrafee, Vikash Ranjan, Jian Li, Angus Rockett, Robert W. Collins, Sylvain Marsillac

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The selenium (Se) rate has been shown to have a significant influence on the deposition of high quality Cu(In,Ga)Se2 thin films. This has been observed primarily by exsitu experiments on thick Cu(In,Ga)Se2 films. In this paper, we present the influence of the Se rate on the properties of both thick and ultrathin CIGS films as measured by in-situ real time spectroscopic ellipsometry (RTSE). These measurements were correlated with ex-situ measurements performed by variable angle spectroscopic ellipsometry, X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray fluorescence (XRF) to analyze the crystal structure, surface morphology, composition ratio and the fundamental optical constants of Cu(In,Ga)Se2 thin films deposited with different Se evaporation rates.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages314-317
Number of pages4
ISBN (Electronic)9781479943982
DOIs
StatePublished - Oct 15 2014
Externally publishedYes
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States
CityDenver
Period6/8/146/13/14

Keywords

  • CIGS
  • co-evaporation
  • selenium rate
  • spectroscopic ellipsometry
  • ultrathin

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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