A study was performed on effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers. The fabrication of these layers was performed by epitaxial growth of strained silicon on relaxed SiGe, wafer bonding and an etch-back technique. It was found that on using 325 nm Raman spectroscopy, no strain relaxation was observed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)