Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide

L. J. Jin, K. L. Pey, W. K. Choi, E. A. Fitzgerald, D. A. Antoniadis, A. J. Pitera, M. L. Lee, D. Z. Chi, Md A. Rahman, T. Osipowicz, C. H. Tung

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The effect of Pt alloy in Ni (Pt∼5 and 10 at. %) on the agglomeration and Ge out diffusion in nickel germanosilicide formed on Si0.75 Ge0.25 (100) has been studied. A remarkable improvement in the agglomeration behavior with increasing Pt atomic percentage is observed by sheet resistance measurements while still maintaining Ni(Pt) monogermanosilicide phase between 400 and 800 °C. Ge out diffusion from the monogermanosilicide grains has been suppressed up to a temperature of 700 °C with the addition of Pt, evident by x-ray diffraction and micro-Raman spectroscopy. In addition, that improvement of surface morphology and suppression of Ge out diffusion with increasing Pt atomic percent is also confirmed by Rutherford backscattering and cross-sectional transmission electron microscopy. The improved morphology and agglomeration are explained by a grain-boundary model which includes kinetic effects. The suppression of Ge out diffusion from the germanosilicide grains is attributed to reduced atomic diffusion and the presence of stronger Pt-Si and Pt-Ge bonds due to the addition of Pt.

Original languageEnglish (US)
Article number033520
JournalJournal of Applied Physics
Issue number3
StatePublished - Aug 1 2005
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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