Effect of oxidation treatments on photoluminescence excitation of porous silicon

N. Rigakis, J. Hilliard, L. Abu Hassan, J. M. Hetrick, D. Andsager, Munir H Nayfeh

Research output: Contribution to journalArticlepeer-review

Abstract

We have studied the effect of various controlled surface oxidation treatments on photoluminescence excitation spectra of porous silicon for various emission energies. The UV excitation spectra of fresh samples were found to be peaked with a monotonic relation between peak excitation energy and emission energy, and to have an onset near 3.3 eV, the direct gap of Si. Aging (ambient oxidation) was found to unevenly affect the excitation spectra, resulting in an effective red shift of the peak center. On the other hand, anodic oxidation or oxidation by exposure of the sample to copper ions in solution caused a blue shift of the excitation spectra. These results are explained in terms of surface condition effects on nonradiative loss sites or on the interquantum dot barriers.

Original languageEnglish (US)
Pages (from-to)440-444
Number of pages5
JournalJournal of Applied Physics
Volume81
Issue number1
DOIs
StatePublished - Jan 1 1997

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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