Effect of low temperature deuterium annealing on plasma process induced damage

S. H. Lee, Y. K. Kim, Y. H. Lee, H. S. Kang, C. G. Ahn, B. K. Kang, Jinju Lee, Kangguo Cheng, Zhi Chen, Karl Hess, Joseph W. Lyding

Research output: Contribution to conferencePaper

Abstract

The effects of low temperature deuterium annealing on plasma process induced damage were examined for devices with a thin gate oxide. The devices were exposed to the plasma during poly-Si gate or metal processes, and the device characteristics were monitored by charge pumping and current-voltage measurements. It was observed that the metal process induced more plasma damage than the poly-Si gate process. The deuterium (D2) annealing had little effect on oxide damage, but it was very effective in reducing the interface damage. After D2 annealing, the devices showed a very low level of interface states, and the strength to withstand electrical stress was also enhanced. To maximize D2 annealing effects, it is suggested that the D2 annealing should be made without any H2 annealing.

Original languageEnglish (US)
Pages188-191
Number of pages4
StatePublished - Dec 1 1999
Externally publishedYes
EventProceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) - Monterey, CA, USA
Duration: May 9 1999May 11 1999

Other

OtherProceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID)
CityMonterey, CA, USA
Period5/9/995/11/99

ASJC Scopus subject areas

  • Engineering(all)

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    Lee, S. H., Kim, Y. K., Lee, Y. H., Kang, H. S., Ahn, C. G., Kang, B. K., Lee, J., Cheng, K., Chen, Z., Hess, K., & Lyding, J. W. (1999). Effect of low temperature deuterium annealing on plasma process induced damage. 188-191. Paper presented at Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID), Monterey, CA, USA, .