Effect of low temperature deuterium annealing on plasma process induced damage

S. H. Lee; Y. K. Kim; Y. H. Lee; H. S. Kang; C. G. Ahn; B. K. Kang; Jinju Lee; Kangguo Cheng; Zhi Chen; Karl Hess; Joseph W. Lyding

Effect of low temperature deuterium annealing on plasma process induced damage

S. H. Lee, Y. K. Kim, Y. H. Lee, H. S. Kang, C. G. Ahn, B. K. Kang, Jinju Lee, Kangguo Cheng, Zhi Chen, Karl Hess, Joseph W. Lyding

Research output: Contribution to conference › Paper › peer-review

Abstract

The effects of low temperature deuterium annealing on plasma process induced damage were examined for devices with a thin gate oxide. The devices were exposed to the plasma during poly-Si gate or metal processes, and the device characteristics were monitored by charge pumping and current-voltage measurements. It was observed that the metal process induced more plasma damage than the poly-Si gate process. The deuterium (D₂) annealing had little effect on oxide damage, but it was very effective in reducing the interface damage. After D₂ annealing, the devices showed a very low level of interface states, and the strength to withstand electrical stress was also enhanced. To maximize D₂ annealing effects, it is suggested that the D₂ annealing should be made without any H₂ annealing.

Original language	English (US)
Pages	188-191
Number of pages	4
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) - Monterey, CA, USA Duration: May 9 1999 → May 11 1999

Other

Other	Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID)
City	Monterey, CA, USA
Period	5/9/99 → 5/11/99

ASJC Scopus subject areas

General Engineering

Library availability

Discover UIUC Full Text

Cite this

@conference{8b59c8c8ca5e4ec298038c384e3fd974,

title = "Effect of low temperature deuterium annealing on plasma process induced damage",

abstract = "The effects of low temperature deuterium annealing on plasma process induced damage were examined for devices with a thin gate oxide. The devices were exposed to the plasma during poly-Si gate or metal processes, and the device characteristics were monitored by charge pumping and current-voltage measurements. It was observed that the metal process induced more plasma damage than the poly-Si gate process. The deuterium (D2) annealing had little effect on oxide damage, but it was very effective in reducing the interface damage. After D2 annealing, the devices showed a very low level of interface states, and the strength to withstand electrical stress was also enhanced. To maximize D2 annealing effects, it is suggested that the D2 annealing should be made without any H2 annealing.",

author = "Lee, {S. H.} and Kim, {Y. K.} and Lee, {Y. H.} and Kang, {H. S.} and Ahn, {C. G.} and Kang, {B. K.} and Jinju Lee and Kangguo Cheng and Zhi Chen and Karl Hess and Lyding, {Joseph W.}",

year = "1999",

language = "English (US)",

pages = "188--191",

note = "Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) ; Conference date: 09-05-1999 Through 11-05-1999",

}

TY - CONF

T1 - Effect of low temperature deuterium annealing on plasma process induced damage

AU - Lee, S. H.

AU - Kim, Y. K.

AU - Lee, Y. H.

AU - Kang, H. S.

AU - Ahn, C. G.

AU - Kang, B. K.

AU - Lee, Jinju

AU - Cheng, Kangguo

AU - Chen, Zhi

AU - Hess, Karl

AU - Lyding, Joseph W.

PY - 1999

Y1 - 1999

N2 - The effects of low temperature deuterium annealing on plasma process induced damage were examined for devices with a thin gate oxide. The devices were exposed to the plasma during poly-Si gate or metal processes, and the device characteristics were monitored by charge pumping and current-voltage measurements. It was observed that the metal process induced more plasma damage than the poly-Si gate process. The deuterium (D2) annealing had little effect on oxide damage, but it was very effective in reducing the interface damage. After D2 annealing, the devices showed a very low level of interface states, and the strength to withstand electrical stress was also enhanced. To maximize D2 annealing effects, it is suggested that the D2 annealing should be made without any H2 annealing.

AB - The effects of low temperature deuterium annealing on plasma process induced damage were examined for devices with a thin gate oxide. The devices were exposed to the plasma during poly-Si gate or metal processes, and the device characteristics were monitored by charge pumping and current-voltage measurements. It was observed that the metal process induced more plasma damage than the poly-Si gate process. The deuterium (D2) annealing had little effect on oxide damage, but it was very effective in reducing the interface damage. After D2 annealing, the devices showed a very low level of interface states, and the strength to withstand electrical stress was also enhanced. To maximize D2 annealing effects, it is suggested that the D2 annealing should be made without any H2 annealing.

UR - http://www.scopus.com/inward/record.url?scp=0033345187&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033345187&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033345187

SP - 188

EP - 191

T2 - Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID)

Y2 - 9 May 1999 through 11 May 1999

ER -

Effect of low temperature deuterium annealing on plasma process induced damage

Abstract

Other

ASJC Scopus subject areas

Library availability

Related links

Fingerprint

Cite this