Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

Sean L. Rommel; Jae Hyung Jang; Wu Lu; Gabriel Cueva; Ling Zhou; Ilesanmi Adesida; Gary Pajer; Ralph Whaley; Allen Lepore; Zane Schellanbarger; Joseph H. Abeles

doi:10.1116/1.1486232

Effect of H₂ on the etch profile of InP/InGaAsP alloys in Cl₂/Ar/H₂ inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

Sean L. Rommel
, Jae Hyung Jang
, Wu Lu
, Gabriel Cueva
, Ling Zhou
, Ilesanmi Adesida
, Gary Pajer
, Ralph Whaley
, Allen Lepore
, Zane Schellanbarger
, Joseph H. Abeles

Research output: Contribution to journal › Conference article › peer-review

Abstract

The positive impact of the addition of H₂ to a Cl₂/Ar process for the etching of InP-based heterostructures was demonstrated. It was found that the addition of H₂ balances the physical and chemical components, resulting in three distinct etch profiles. A racetrack resonator with a quality factor of 8000 was also demonstrated.

Original language	English (US)
Pages (from-to)	1327-1330
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1486232
State	Published - Jul 2002
Externally published	Yes
Event	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: Jan 6 2002 → Jan 10 2002

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Online availability

10.1116/1.1486232

Library availability

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Cite this

Rommel, S. L., Jang, J. H., Lu, W., Cueva, G., Zhou, L., Adesida, I., Pajer, G., Whaley, R., Lepore, A., Schellanbarger, Z., & Abeles, J. H. (2002). Effect of H₂ on the etch profile of InP/InGaAsP alloys in Cl₂/Ar/H₂ inductively coupled plasma reactive ion etching chemistries for photonic device fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(4), 1327-1330. https://doi.org/10.1116/1.1486232

Effect of H₂ on the etch profile of InP/InGaAsP alloys in Cl₂/Ar/H₂ inductively coupled plasma reactive ion etching chemistries for photonic device fabrication. / Rommel, Sean L.; Jang, Jae Hyung; Lu, Wu et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 4, 07.2002, p. 1327-1330.

Research output: Contribution to journal › Conference article › peer-review

Rommel, SL, Jang, JH, Lu, W, Cueva, G, Zhou, L, Adesida, I, Pajer, G, Whaley, R, Lepore, A, Schellanbarger, Z & Abeles, JH 2002, 'Effect of H₂ on the etch profile of InP/InGaAsP alloys in Cl₂/Ar/H₂ inductively coupled plasma reactive ion etching chemistries for photonic device fabrication', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 4, pp. 1327-1330. https://doi.org/10.1116/1.1486232

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abstract = "The positive impact of the addition of H2 to a Cl2/Ar process for the etching of InP-based heterostructures was demonstrated. It was found that the addition of H2 balances the physical and chemical components, resulting in three distinct etch profiles. A racetrack resonator with a quality factor of 8000 was also demonstrated.",

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AU - Lu, Wu

AU - Cueva, Gabriel

AU - Zhou, Ling

AU - Adesida, Ilesanmi

AU - Pajer, Gary

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