Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity

Elyse Rosenbaum, Reza Rofan, Chenming Hu

Research output: Contribution to journalArticle

Abstract

N- and pMOSFET's with 9-nm gate oxide are compared. Injected hot holes are found to be about 100 times as effective as electrons in precipitating oxide breakdown. PMOSFET's can tolerate 1000 times more charge injection than nMOSFET's, but not more drain current stress.

Original languageEnglish (US)
Pages (from-to)599-601
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number11
DOIs
StatePublished - Nov 1991

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Hot carriers
Oxides
Charge injection
Drain current
Electrons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity. / Rosenbaum, Elyse; Rofan, Reza; Hu, Chenming.

In: IEEE Electron Device Letters, Vol. 12, No. 11, 11.1991, p. 599-601.

Research output: Contribution to journalArticle

Rosenbaum, Elyse ; Rofan, Reza ; Hu, Chenming. / Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity. In: IEEE Electron Device Letters. 1991 ; Vol. 12, No. 11. pp. 599-601.
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