@article{d5a59f978f0f4942a554b6e517bd3e21,
title = "Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity",
abstract = "N- and pMOSFET's with 9-nm gate oxide are compared. Injected hot holes are found to be about 100 times as effective as electrons in precipitating oxide breakdown. PMOSFET's can tolerate 1000 times more charge injection than nMOSFET's, but not more drain current stress.",
author = "Elyse Rosenbaum and Reza Rofan and Chenming Hu",
note = "Funding Information: Manuscript received May 27, 1991; revised August 18, 1991. This work was supported by the Semiconductor Research Corporation, Hewlett-Packard, and Rockwell International under the MICRO program, and ISTO/SDIO through ONR under Contract “14-85-K-0603. The authors are with the Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720. IEEE Log Number 9103787.",
year = "1991",
month = nov,
doi = "10.1109/55.119210",
language = "English (US)",
volume = "12",
pages = "599--601",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}