Effect of growth temperature on the properties of p-type GaN grown by plasma-assisted molecular beam epitaxy

J. M. Myoung, K. H. Shim, O. Gluschenkov, C. Kim, K. Kim, S. Kim, S. G. Bishop

Research output: Contribution to journalArticle

Abstract

p-type GaN films were grown at two different temperatures, 650 and 700°C, by plasma-assisted molecular beam epitaxy (PAMBE) using a radio frequency (RF) plasma source. High hole concentrations of the order of 1018 cm-3 were achieved for both films without any post-growth treatment. For (0 0 0 2) diffraction from the p-type films grown at 700°C, the full-width at half-maximum (FWHM) of the double-crystal X-ray rocking curve was 7.8 arcmin, the smallest ever reported for p-type GaN films grown on sapphire substrates. The room-temperature photoluminescence (PL) measurements on both films showed that band edge emission at 365 nm dominated the PL spectra of the films grown at 700°C, while emission at 413 nm, associated with deep Mg complexes, dominated those of the films grown at 650°C. The films grown at 700°C showed better crystalline quality and optical properties than those grown at 650°C.

Original languageEnglish (US)
Pages (from-to)241-246
Number of pages6
JournalJournal of Crystal Growth
Volume182
Issue number3-4
DOIs
StatePublished - Dec 1997

Keywords

  • Hall measurement
  • P-type GaN
  • Photoluminescence
  • Plasma-assisted MBE
  • SIMS
  • XRC

ASJC Scopus subject areas

  • Condensed Matter Physics

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