Effect of growth rate on the spatial distributions of dome-shaped Ge islands on Si(001)

Benjamin Cho, Thomas Schwarz-Selinger, Kenji Ohmori, David G. Cahill, J. E. Greene

Research output: Contribution to journalArticlepeer-review

Abstract

Ge/Si(001) layers are grown by gas-source molecular beam epitaxy at (formula presented) to probe island self-ordering phenomena. We vary the Ge growth rate by a factor of 40, 1.2-47 monolayers (ML) (formula presented) and adjust the Ge coverage, 5.9-8.9 ML, to produce films consisting primarily of dome-shaped Ge islands. Measurements of the radial and nearest-neighbor distributions are compared to calculated distributions for random arrangements of circular islands. At low growth rates, island formation is inhibited at small separation. At high growth rates, the angular distributions of nearest-neighbor islands show pronounced island ordering along (formula presented) directions.

Original languageEnglish (US)
Pages (from-to)1-5
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number19
DOIs
StatePublished - Jan 1 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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