Effect of Ga content on defect states in CuIn1-xGa xSe2 photovoltaic devices

J. T. Heath; J. D. Cohen; W. N. Shafarman; D. X. Liao; A. A. Rockett

doi:10.1063/1.1485301

Effect of Ga content on defect states in CuIn_1-xGa _xSe₂ photovoltaic devices

J. T. Heath, J. D. Cohen, W. N. Shafarman, D. X. Liao, A. A. Rockett

Research output: Contribution to journal › Article › peer-review

Abstract

Defects in the band gap of CuIn_1-xGa_xSe₂ have been characterized using transient photocapacitance spectroscopy. The measured spectra clearly show response from a band of defects centered around 0.8 eV from the valence band edge as well as an exponential distribution of band tail states. Despite Ga contents ranging from Ga/(In+Ga)=0.0 to 0.8, the defect bandwidth and its position relative to the valence band remain constant. This defect band may act as an important recombination center, contributing to the decrease in device efficiency with increasing Ga content.

Original language	English (US)
Pages (from-to)	4540-4542
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	24
DOIs	https://doi.org/10.1063/1.1485301
State	Published - Jun 17 2002
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1485301

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Cite this

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abstract = "Defects in the band gap of CuIn1-xGaxSe2 have been characterized using transient photocapacitance spectroscopy. The measured spectra clearly show response from a band of defects centered around 0.8 eV from the valence band edge as well as an exponential distribution of band tail states. Despite Ga contents ranging from Ga/(In+Ga)=0.0 to 0.8, the defect bandwidth and its position relative to the valence band remain constant. This defect band may act as an important recombination center, contributing to the decrease in device efficiency with increasing Ga content.",

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AU - Cohen, J. D.

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AU - Liao, D. X.

AU - Rockett, A. A.

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AB - Defects in the band gap of CuIn1-xGaxSe2 have been characterized using transient photocapacitance spectroscopy. The measured spectra clearly show response from a band of defects centered around 0.8 eV from the valence band edge as well as an exponential distribution of band tail states. Despite Ga contents ranging from Ga/(In+Ga)=0.0 to 0.8, the defect bandwidth and its position relative to the valence band remain constant. This defect band may act as an important recombination center, contributing to the decrease in device efficiency with increasing Ga content.

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