We have studied the degradation kinetics of undoped hydrogenated amorphous silicon (a-Si:H) samples, in which a small fraction of microcrystallites is embedded. We find that the defect density increases with an unusually slow initial pace, which is then followed by the “normal” t1/3 law and the subsequent saturation. The corresponding photoconductivity shows a remarkable initial stability. We present a model that reproduces the experimental results, and relates the structural and degradation anomalies. The measured defect density is interpreted as a superposition of contributions from a defective layer that wraps the microcrystallites and a high-quality amorphous matrix.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Jan 1 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics