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Effect of e-beam irradiation on a p-n junction GaN light emitting diode
X. Li
, S. Q. Gu
, E. E. Reuter
, J. T. Verdeyen
, S. G. Bishop
, J. J. Coleman
Electrical and Computer Engineering
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peer-review
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Keyphrases
Atmospheric Pressure
50%
Beam Irradiation
100%
Current Density
50%
Double Buffer Layer
50%
Electroluminescence
100%
Electroluminescence Spectra
50%
Electron Beam
100%
Electron Beam Exposure
50%
Electron Beam Source
50%
Exposure Time
50%
Feature Change
50%
GaN Laser Diode
100%
Junction Structure
50%
Light-emitting Diodes
100%
Low-energy Electrons
50%
Metal-organic Chemical Vapor Deposition (MOCVD)
50%
Mg Concentration
50%
P-n Junction
100%
Room Temperature
50%
Sapphire Substrate
50%
Spectral Features
50%
Time Density
50%
Engineering
Atmospheric Pressure
33%
Beam Irradiation
100%
Buffer Layer
33%
Chemical Vapor Deposition
33%
Energy Electron
33%
Exposure Time
33%
Light-Emitting Diode
100%
Optical Spectrum
33%
Room Temperature
33%
Sapphire Substrate
33%
Spectral Feature
33%
Vapor Deposition
33%
Physics
Atmospheric Pressure
33%
Electroluminescence
100%
Electron Beam
66%
Light Emitting Diode
100%
Metalorganic Chemical Vapor Deposition
33%
Room Temperature
33%
Material Science
Buffer Layer
33%
Chemical Vapor Deposition
33%
Density
33%
Electroluminescence
100%
Light-Emitting Diode
100%
Sapphire
33%