Effect of e-beam irradiation on a p-n junction GaN light emitting diode

Keyphrases

• Atmospheric Pressure 50%
• Current Density 50%
• Double Buffer Layer 50%
• E-beam Irradiation 100%
• Electroluminescence 100%
• Electroluminescence Spectra 50%
• Electron Beam 50%
• Electron Beam Exposure 50%
• Electron Beam Source 50%
• Exposure Time 50%
• Feature Change 50%
• GaN-based Light-emitting Diodes 100%
• Junction Structure 50%
• Light-emitting Diodes 100%
• Low-energy Electrons 50%
• Metal-organic Chemical Vapor Deposition (MOCVD) 50%
• Mg Concentration 50%
• P-n Junction 100%
• Room Temperature 50%
• Sapphire Substrate 50%
• Spectral Features 50%
• Time Density 50%

Engineering

• Atmospheric Pressure 33%
• Beam Irradiation 100%
• Buffer Layer 33%
• Chemical Vapor Deposition 33%
• Energy Electron 33%
• Exposure Time 33%
• Light-Emitting Diode 100%
• Room Temperature 33%
• Sapphire Substrate 33%
• Spectral Feature 33%
• Vapor Deposition 33%