Effect of e-beam irradiation on a p-n junction GaN light emitting diode

Xiuling Li, S. Q. Gu, E. E. Reuter, J. T. Verdeyen, S. G. Bishop, J. J. Coleman

Research output: Contribution to journalArticle

Abstract

A GaN p-n junction structure was grown on a (0001) sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition using a double buffer layer. The resulting light emitting diode (LED) was further exposed to a low-energy electron beam source. The effect of e-beam exposure on the room-temperature electroluminescence spectra of the LED is reported. It is found that the electroluminescence spectral features change dramatically as a function of the electron-beam exposure time and current density. This is attributed to changes in active Mg concentration. The origin of each electroluminescence band is discussed.

Original languageEnglish (US)
Pages (from-to)2687-2690
Number of pages4
JournalJournal of Applied Physics
Volume80
Issue number5
DOIs
StatePublished - Sep 1 1996

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Li, X., Gu, S. Q., Reuter, E. E., Verdeyen, J. T., Bishop, S. G., & Coleman, J. J. (1996). Effect of e-beam irradiation on a p-n junction GaN light emitting diode. Journal of Applied Physics, 80(5), 2687-2690. https://doi.org/10.1063/1.363131