Effect of e-beam irradiation on a p-n junction GaN light emitting diode

X. Li; S. Q. Gu; E. E. Reuter; J. T. Verdeyen; S. G. Bishop; J. J. Coleman

doi:10.1063/1.363131

Effect of e-beam irradiation on a p-n junction GaN light emitting diode

X. Li, S. Q. Gu, E. E. Reuter, J. T. Verdeyen, S. G. Bishop, J. J. Coleman

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A GaN p-n junction structure was grown on a (0001) sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition using a double buffer layer. The resulting light emitting diode (LED) was further exposed to a low-energy electron beam source. The effect of e-beam exposure on the room-temperature electroluminescence spectra of the LED is reported. It is found that the electroluminescence spectral features change dramatically as a function of the electron-beam exposure time and current density. This is attributed to changes in active Mg concentration. The origin of each electroluminescence band is discussed.

Original language	English (US)
Pages (from-to)	2687-2690
Number of pages	4
Journal	Journal of Applied Physics
Volume	80
Issue number	5
DOIs	https://doi.org/10.1063/1.363131
State	Published - Sep 1 1996

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General Physics and Astronomy

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abstract = "A GaN p-n junction structure was grown on a (0001) sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition using a double buffer layer. The resulting light emitting diode (LED) was further exposed to a low-energy electron beam source. The effect of e-beam exposure on the room-temperature electroluminescence spectra of the LED is reported. It is found that the electroluminescence spectral features change dramatically as a function of the electron-beam exposure time and current density. This is attributed to changes in active Mg concentration. The origin of each electroluminescence band is discussed.",

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AU - Li, X.

AU - Gu, S. Q.

AU - Reuter, E. E.

AU - Verdeyen, J. T.

AU - Bishop, S. G.

AU - Coleman, J. J.

PY - 1996/9/1

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N2 - A GaN p-n junction structure was grown on a (0001) sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition using a double buffer layer. The resulting light emitting diode (LED) was further exposed to a low-energy electron beam source. The effect of e-beam exposure on the room-temperature electroluminescence spectra of the LED is reported. It is found that the electroluminescence spectral features change dramatically as a function of the electron-beam exposure time and current density. This is attributed to changes in active Mg concentration. The origin of each electroluminescence band is discussed.

AB - A GaN p-n junction structure was grown on a (0001) sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition using a double buffer layer. The resulting light emitting diode (LED) was further exposed to a low-energy electron beam source. The effect of e-beam exposure on the room-temperature electroluminescence spectra of the LED is reported. It is found that the electroluminescence spectral features change dramatically as a function of the electron-beam exposure time and current density. This is attributed to changes in active Mg concentration. The origin of each electroluminescence band is discussed.

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Effect of e-beam irradiation on a p-n junction GaN light emitting diode

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