Effect of dose rate on ion beam mixing in Nb-Si

The influence of dose rate, i.e., ion flux, on ion beam mixing in Nb-Si bilayer samples was measured at room temperature and 325°C. At the higher temperature, an increase in dose rate of a factor of 20 caused a decrease in the thickness of the mixed layer by a factor of 1.6 for equal total doses. At room temperature, the same change in flux had no effect on mixing. These results are consistent with radiation-enhanced diffusion theory in the recombination-limited regime.