Abstract
The influence of dose rate, i.e., ion flux, on ion beam mixing in Nb-Si bilayer samples was measured at room temperature and 325°C. At the higher temperature, an increase in dose rate of a factor of 20 caused a decrease in the thickness of the mixed layer by a factor of 1.6 for equal total doses. At room temperature, the same change in flux had no effect on mixing. These results are consistent with radiation-enhanced diffusion theory in the recombination-limited regime.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1519-1521 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 48 |
| Issue number | 22 |
| DOIs | |
| State | Published - 1986 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)