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Effect of Dislocations on Electrical and Optical Properties in GaAs and GaN
J. H. You,
Harley T Johnson
Mechanical Science and Engineering
Beckman Institute for Advanced Science and Technology
Materials Research Lab
Office of the Vice Chancellor for Research and Innovation
National Center for Supercomputing Applications (NCSA)
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Keyphrases
Optical Properties
100%
Electrical Properties
100%
Dislocation
100%
Gallium Nitride
100%
Gallium Arsenide Nitride
100%
Edge Dislocation
42%
Gallium Arsenide
42%
Charge Distribution
28%
Electron Acceptor
14%
Semiconductors
14%
Finite Element Method
14%
Screw
14%
Real Space
14%
Wurtzite
14%
Schrödinger Equation
14%
Multi-subband
14%
Filling Fraction
14%
Misalignment
14%
Line Defect
14%
Electron Mobility
14%
Optical Effects
14%
Equation Method
14%
Electrical Effect
14%
Material Science
Optical Property
100%
Gallium Arsenide
100%
Gallium Nitride
100%
Edge Dislocation
80%
Finite Element Method
20%
Electron Mobility
20%
Screw Dislocation
20%
Engineering
Gallium Arsenide
100%
Nitride
100%
Edge Dislocation
80%
Electron Acceptor
20%
Experimental Result
20%
Real Space
20%
Schr Dinger Equation
20%
Finite Element Analysis
20%
Screw Dislocation
20%