TY - GEN
T1 - Effect of copper oxide layer on solder wetting temperature under a reduced atmosphere
AU - Zhang, Lei
AU - Sun, Guangwei
AU - Li, Li
AU - Shang, J. K.
PY - 2007
Y1 - 2007
N2 - The wetting behavior of SnPb solder on copper surface in absence of flux was investigated in a forming gas atmosphere (5% H2 and 95% Ar). X-ray photoelectron spectroscopy (XPS) analysis indicated that Cu2O oxide layer, 2.0 - 4.2 nm thick, was formed after exposing the milled and polished copper surface in air from 5 min to 5 hours. The wetting temperature did not change much after copper was exposed to air for more than 3 hours. Wetting took place when molten solder was in contact with reduced copper surfaces, the reaction between pure copper and tin followed afterward. The initial temperature of solder wetting on copper was close to the reduction temperature of Cu2O and increased with the thickness of the surface oxide.
AB - The wetting behavior of SnPb solder on copper surface in absence of flux was investigated in a forming gas atmosphere (5% H2 and 95% Ar). X-ray photoelectron spectroscopy (XPS) analysis indicated that Cu2O oxide layer, 2.0 - 4.2 nm thick, was formed after exposing the milled and polished copper surface in air from 5 min to 5 hours. The wetting temperature did not change much after copper was exposed to air for more than 3 hours. Wetting took place when molten solder was in contact with reduced copper surfaces, the reaction between pure copper and tin followed afterward. The initial temperature of solder wetting on copper was close to the reduction temperature of Cu2O and increased with the thickness of the surface oxide.
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U2 - 10.1109/ICEPT.2007.4441423
DO - 10.1109/ICEPT.2007.4441423
M3 - Conference contribution
AN - SCOPUS:50249139055
SN - 1424413923
SN - 9781424413928
T3 - Proceedings of the Electronic Packaging Technology Conference, EPTC
BT - Proceedings of the 2007 8th International Conference on Electronic Packaging Technology, ICEPT
T2 - 2007 8th International Conference on Electronic Packaging Technology, ICEPT
Y2 - 14 August 2007 through 17 August 2007
ER -