Effect of atomic bonding on defect production in collision cascades

K. Nordlund, R. S. Averback, T. Diaz de la Rubia

Research output: Contribution to journalConference articlepeer-review

Abstract

We study the mechanisms of damage production during ion irradiation using molecular dynamics simulations of 400 eV-10 keV collision cascades in four different materials. The materials Al, Si, Cu and Ge are contrasted to each other with respect to the mass, melting temperature and crystal structure. The results show that the crystal structure clearly has the strongest effect on the nature of the damage produced, and elucidate how the open crystal structure affects the nature of defects produced in silicon.

Original languageEnglish (US)
Pages (from-to)113-118
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume469
DOIs
StatePublished - 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: Mar 31 1997Apr 4 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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