Effect of annealing on the conductivity of electroless deposited Ni nanowires and films

Sathya Mani, Taher Saif, Jong H. Han

Research output: Contribution to journalArticle

Abstract

We examined the effect of annealing on the conductivity of electroless deposited nickel nanowires and nanofilms. The electroless deposited nanowires were 50-200-nm thick and a few micrometers long. TEM analysis of the wires revealed that they have a bead-like (50 nm in size) structure. On annealing, in a nonoxidizing environment, the beads coalesced to form contiguous wires. Four-point resistance measurements of the nickel nanowires showed that annealed wires have considerably lower resistivity than nonannealed wires. In-situ resistance measurement of Ni nanofilms, during annealing, showed an exponential decay of resistance with temperature. The drop in resistance is thought to be a result of bead coalescence and grain-boundary attrition. After annealing, the resistivity showed a linear dependence on temperature, with the slope indicative of the electron-phonon interaction.

Original languageEnglish (US)
Pages (from-to)138-141
Number of pages4
JournalIEEE Transactions on Nanotechnology
Volume5
Issue number2
DOIs
StatePublished - Mar 1 2006

Keywords

  • Annealing
  • Four-point
  • In-situ
  • Nanowires
  • Nickel
  • Resistivity

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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