Abstract
We examined the effect of annealing on the conductivity of electroless deposited nickel nanowires and nanofilms. The electroless deposited nanowires were 50-200-nm thick and a few micrometers long. TEM analysis of the wires revealed that they have a bead-like (50 nm in size) structure. On annealing, in a nonoxidizing environment, the beads coalesced to form contiguous wires. Four-point resistance measurements of the nickel nanowires showed that annealed wires have considerably lower resistivity than nonannealed wires. In-situ resistance measurement of Ni nanofilms, during annealing, showed an exponential decay of resistance with temperature. The drop in resistance is thought to be a result of bead coalescence and grain-boundary attrition. After annealing, the resistivity showed a linear dependence on temperature, with the slope indicative of the electron-phonon interaction.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 138-141 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Nanotechnology |
| Volume | 5 |
| Issue number | 2 |
| DOIs | |
| State | Published - Mar 2006 |
Keywords
- Annealing
- Four-point
- In-situ
- Nanowires
- Nickel
- Resistivity
ASJC Scopus subject areas
- Computer Science Applications
- Electrical and Electronic Engineering