Effect of acceleration voltage on properties of nitrogen-doped TiO2 thin films

Feng Fang, Xiao Qin Wu, Qi Li, Jian Ku Shang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Titanium dioxide has been used for environmental applications. However, pure TiO2 has low photocatalytic efficiency outdoors because of its large energy band gap. Higher nitrogen-doping level would have lower band-gap energy and it would make it possible to improve the utilization ratio of solar energy. Heavily nitrogen-doped TiO2 could be obtained by using ion beam assisted deposition (IBAD) technique. Acceleration voltage is a very important parameter of IBAD technique and will affect the processes of depositing thin film. Under the given experiment condition, acceleration voltage had little effect on the structure and absorbance spectra of the obtained nitrogen-doped titanium oxide thin films, but had great effect on the deposition rate, composition and surface morphology of the thin films. When the accelerate voltage was 250V, the deposition rate was the highest (about 9.0 nm/min), the resulting TiO2-xNx films contained nitrogen levels up to x =0.45, the structures were mostly crystalline anatase and the amount of shift was observed about 500 nm. The optimum acceleration voltage is about 250V under the given condition.

Original languageEnglish (US)
Title of host publicationMaterials Science and Chemical Engineering
Pages496-501
Number of pages6
DOIs
StatePublished - 2013
Event2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013 - , Singapore
Duration: Feb 20 2013Feb 21 2013

Publication series

NameAdvanced Materials Research
Volume699
ISSN (Print)1022-6680

Other

Other2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013
Country/TerritorySingapore
Period2/20/132/21/13

Keywords

  • Acceleration voltage
  • Deposition rate
  • IBAD
  • Nitrogen doped TiO

ASJC Scopus subject areas

  • General Engineering

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