Dynamically assisted interlayer hopping in YBa2Cu3O6+x

P. Nyhus, M. A. Karlow, S Lance Cooper, B. W. Veal, A. P. Paulikas

Research output: Contribution to journalArticle

Abstract

We report evidence from c-axis-polarized Raman scattering and optical-reflectivity measurements that doping-induced and phonon-mediated changes in the O(4)-Cu(1)-O(4) structure influence c-axis charge dynamics in YBa2Cu3O6+x. With increased doping, we observe a rapid increase in the interbilayer hopping rate which we suggest may be caused by the systematic decrease in the Cu(2)-O(4) bond length. Also, c-axis-polarized Raman scattering measurements provide evidence that dynamical modulation of the O(4)-Cu(2) bond length by c-axis phonons contributes to assisted interbilayer hopping.

Original languageEnglish (US)
Pages (from-to)13898-13901
Number of pages4
JournalPhysical Review B
Volume50
Issue number18
DOIs
StatePublished - Jan 1 1994

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Nyhus, P., Karlow, M. A., Cooper, S. L., Veal, B. W., & Paulikas, A. P. (1994). Dynamically assisted interlayer hopping in YBa2Cu3O6+x. Physical Review B, 50(18), 13898-13901. https://doi.org/10.1103/PhysRevB.50.13898