TY - JOUR
T1 - Dynamical behavior of the implant profile during ion implantation at elevated temperatures
AU - Yacout, A. M.
AU - Lam, N. Q.
AU - Stubbins, J. F.
N1 - Funding Information:
* Work supported by the US Department of Energy, BES-Materials Sciences, under contract W-31-109~Eng-38.
PY - 1991/7/1
Y1 - 1991/7/1
N2 - The evolution of the implant distribution in time and space during elevated temperature ion implantation has been theoretically investigated using a comprehensive kinetic model. The implanted atoms were allowed to interact with the surface and with radiation-induced point defects. The synergistic effects of Gibbsian segregation, preferential sputtering, displacement mixing, radiation-enhanced diffusion, and radiation-induced segregation, as well as the influence of spatially nonuniform defect production were taken into account. The effects of the dynamical changes in the ion and damage distributions during implantation were also incorporated, by updating these distributions at high doses, using information obtained from TRIM calculations. Model calculations were performed for Al+ and Si+ implantation into Ni.
AB - The evolution of the implant distribution in time and space during elevated temperature ion implantation has been theoretically investigated using a comprehensive kinetic model. The implanted atoms were allowed to interact with the surface and with radiation-induced point defects. The synergistic effects of Gibbsian segregation, preferential sputtering, displacement mixing, radiation-enhanced diffusion, and radiation-induced segregation, as well as the influence of spatially nonuniform defect production were taken into account. The effects of the dynamical changes in the ion and damage distributions during implantation were also incorporated, by updating these distributions at high doses, using information obtained from TRIM calculations. Model calculations were performed for Al+ and Si+ implantation into Ni.
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U2 - 10.1016/0168-583X(91)95174-C
DO - 10.1016/0168-583X(91)95174-C
M3 - Article
AN - SCOPUS:44949272697
SN - 0168-583X
VL - 59-60
SP - 57
EP - 59
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - PART 1
ER -