Abstract
Manufacturability of a design that is processed with shallow trench isolation (STI) depends on the uniformity of the chemical-mechanical polishing (CMP) step in STI. The CMP step in STI is a dual-material polish, for which all previous studies on dummy feature placement for single-material polish are not applicable. Based on recent semi-physical models of polish pad bending, local polish pad compression, and different polish rates for materials present in a dual-material polish, this paper derives a time-dependent relation between post-CMP topography and layout pattern density for CMP in STI. Using the dependencies derived, the first formulation of dummy feature placement for CMP in STI is given as a nonlinear programming problem. An iterative approach is proposed to solve the dummy feature placement problem. Computational experience on four layouts from Motorola is given.
| Original language | English (US) |
|---|---|
| Pages | 118-123 |
| Number of pages | 6 |
| DOIs | |
| State | Published - 2001 |
| Externally published | Yes |
| Event | 2001 International Symposium on Physical Design - Sonoma, CA, United States Duration: Apr 1 2001 → Apr 4 2001 |
Other
| Other | 2001 International Symposium on Physical Design |
|---|---|
| Country/Territory | United States |
| City | Sonoma, CA |
| Period | 4/1/01 → 4/4/01 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering