Dummy-feature placement for chemical-mechanical polishing uniformity in a shallow-trench isolation process

Ruiqi Tian, Xiaoping Tang, Martin D.F. Wong

Research output: Contribution to journalArticlepeer-review

Abstract

Manufacturability of a design that is processed with shallow-trench isolation (STI) depends on the uniformity of the chemical-mechanical polishing (CMP) step in STI. The CMP step in STI is a dual-material polish for which all previous studies on dummy-feature placement for single-material polish by Kahng et al. (1999), Tian et al. (2000), and Chen et al. (2000) are not applicable. Based on recent semiphysical models of polish-pad bending by Ouma et al. (1998), local polish-pad compression by Grillaert (1999) and Smith (1999), and different polish rates for materials present in a dual-material polish by Grillaert (1999) and Tugbawa et al. (1999), this paper derives a time-dependent relation between post-CMP topography and layout pattern density for CMP in STI. Using the dependencies derived, the first formulation of dummy-feature placement for CMP in STI is given as a nonlinear-programming problem. An iterative approach is proposed to solve the dummy-feature placement problem. Computational experience on four layouts from Motorola is given.

Original languageEnglish (US)
Pages (from-to)63-71
Number of pages9
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume21
Issue number1
DOIs
StatePublished - Jan 1 2002
Externally publishedYes

Keywords

  • Chemical-mechanical polishing
  • Design for manufacturability
  • Dummy feature
  • Planarity
  • Shallow trench isolation

ASJC Scopus subject areas

  • Software
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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