Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage

M. R. Lueck; C. L. Andre; A. J. Pitera; M. L. Lee; E. A. Fitzgerald; S. A. Ringel

doi:10.1109/LED.2006.870250

Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage

M. R. Lueck, C. L. Andre, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, S. A. Ringel

Research output: Contribution to journal › Article › peer-review

Abstract

Dual junction GaInP/GaAs solar cells have been grown and fabricated on Si substrates using relaxed, compositionally graded SiGe buffer layers that provide a nearly lattice-matched low threading dislocation Ge surface for subsequent cell growth. The dual junction cells on SiGe/Si displayed high open circuit voltages in excess of 2.2 V, compared to 2.34 V for control cells on GaAs, that are consistent with maintaining the 1.8 × 10⁶ cm^-2 threading dislocation density throughout the cell structure. Even with total current output limited by large grid coverage and high reflectance, total area AM1.5G efficiency is 16.8%, with active area efficiency at 18.6%. The high V_oc establishes that SiGe metamorphic buffers are viable for integrating III-V multijunction cells on Si in a monolithic process.

Original language	English (US)
Pages (from-to)	142-144
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	3
DOIs	https://doi.org/10.1109/LED.2006.870250
State	Published - Mar 2006
Externally published	Yes

Keywords

Dislocation
Dual junction
GaAs
GaInp
Heteroepitaxy
InGap
Lattice-mismatch
Metamorphic
Photovoltaic
Si
SiGe
Solar cell
Tandem

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/LED.2006.870250

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title = "Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage",

abstract = "Dual junction GaInP/GaAs solar cells have been grown and fabricated on Si substrates using relaxed, compositionally graded SiGe buffer layers that provide a nearly lattice-matched low threading dislocation Ge surface for subsequent cell growth. The dual junction cells on SiGe/Si displayed high open circuit voltages in excess of 2.2 V, compared to 2.34 V for control cells on GaAs, that are consistent with maintaining the 1.8 × 106 cm-2 threading dislocation density throughout the cell structure. Even with total current output limited by large grid coverage and high reflectance, total area AM1.5G efficiency is 16.8%, with active area efficiency at 18.6%. The high Voc establishes that SiGe metamorphic buffers are viable for integrating III-V multijunction cells on Si in a monolithic process.",

keywords = "Dislocation, Dual junction, GaAs, GaInp, Heteroepitaxy, InGap, Lattice-mismatch, Metamorphic, Photovoltaic, Si, SiGe, Solar cell, Tandem",

author = "Lueck, {M. R.} and Andre, {C. L.} and Pitera, {A. J.} and Lee, {M. L.} and Fitzgerald, {E. A.} and Ringel, {S. A.}",

note = "Funding Information: Manuscript received September 14, 2005; revised December 12, 2005. This work was supported in part by National Renewable Energy Laboratory Subcontract XAT-4-33624-14, by NASA under Grant NCC3-974, by Army Research Office under Grant 5710001850, and by the National Science Foundation focused research group under Grant DMR-0313468. The review of this letter was arranged by Editor T. Mizutani.",

year = "2006",

month = mar,

doi = "10.1109/LED.2006.870250",

language = "English (US)",

volume = "27",

pages = "142--144",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Lueck, M. R.

AU - Andre, C. L.

AU - Pitera, A. J.

AU - Lee, M. L.

AU - Fitzgerald, E. A.

AU - Ringel, S. A.

N1 - Funding Information: Manuscript received September 14, 2005; revised December 12, 2005. This work was supported in part by National Renewable Energy Laboratory Subcontract XAT-4-33624-14, by NASA under Grant NCC3-974, by Army Research Office under Grant 5710001850, and by the National Science Foundation focused research group under Grant DMR-0313468. The review of this letter was arranged by Editor T. Mizutani.

PY - 2006/3

Y1 - 2006/3

N2 - Dual junction GaInP/GaAs solar cells have been grown and fabricated on Si substrates using relaxed, compositionally graded SiGe buffer layers that provide a nearly lattice-matched low threading dislocation Ge surface for subsequent cell growth. The dual junction cells on SiGe/Si displayed high open circuit voltages in excess of 2.2 V, compared to 2.34 V for control cells on GaAs, that are consistent with maintaining the 1.8 × 106 cm-2 threading dislocation density throughout the cell structure. Even with total current output limited by large grid coverage and high reflectance, total area AM1.5G efficiency is 16.8%, with active area efficiency at 18.6%. The high Voc establishes that SiGe metamorphic buffers are viable for integrating III-V multijunction cells on Si in a monolithic process.

AB - Dual junction GaInP/GaAs solar cells have been grown and fabricated on Si substrates using relaxed, compositionally graded SiGe buffer layers that provide a nearly lattice-matched low threading dislocation Ge surface for subsequent cell growth. The dual junction cells on SiGe/Si displayed high open circuit voltages in excess of 2.2 V, compared to 2.34 V for control cells on GaAs, that are consistent with maintaining the 1.8 × 106 cm-2 threading dislocation density throughout the cell structure. Even with total current output limited by large grid coverage and high reflectance, total area AM1.5G efficiency is 16.8%, with active area efficiency at 18.6%. The high Voc establishes that SiGe metamorphic buffers are viable for integrating III-V multijunction cells on Si in a monolithic process.

KW - Dislocation

KW - Dual junction

KW - GaAs

KW - GaInp

KW - Heteroepitaxy

KW - InGap

KW - Lattice-mismatch

KW - Metamorphic

KW - Photovoltaic

KW - Si

KW - SiGe

KW - Solar cell

KW - Tandem

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Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage

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