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Dry lithography using focused ion beam implantation and reactive ion etching of SiO
2
Kent D. Choquette
, Lloyd R. Harriott
Research output
:
Contribution to journal
›
Article
›
peer-review
Overview
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Dive into the research topics of 'Dry lithography using focused ion beam implantation and reactive ion etching of SiO
2
'. Together they form a unique fingerprint.
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Material Science
Lithography
100%
Reactive Ion Etching
100%
Focused Ion Beam
100%
Gallium Arsenide
33%
Plasma Etching
33%
Gallium Ion
33%
Ion Bombardment
33%
Engineering
Lithography
100%
Focused Ion Beam
100%
Silicon Dioxide
100%
Durables
16%
Gallium Arsenide
16%
Ion Implantation
16%
Implant
16%
Etch Rate
16%
Dry Process
16%
Aspect Ratio
16%
Medicine and Dentistry
Silicon Dioxide
100%
Focused Ion Beam
100%
Implant
16%
Minoxidil
16%
Keyphrases
Submicron Lithography
16%
Etch Rate Ratio
16%