Reactive ion etching (RIE), reactive ion beam etching (RIBE), and chemically-assisted ion beam etching (CAIBE) are variations on similar dry etching processes that provide a high degree of etch profile control at submicron linewidths. This paper presents a comparison of the etch rates and profiles obtained for stacked n** plus polysilicon/refractory metal silicides films using SF//6/O//2 RIE, SiF//4/Cl//2 RIE and Cl//2/Ar** plus CAIBE. The etch rates for broad beam Cl//2/Ar** plus CAIBE of several refractory metals and refractory metal silicides are reported.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|Number of pages||6|
|State||Published - 1983|
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