Dry etching of GaN using chemically assisted ion beam etching with HCl and H2/Cl2

A. T. Ping, A. C. Schmitz, M. Asif Khan, I. Adesida

Research output: Contribution to journalArticle


The dry etching characteristics of GaN were investigated using chemically assisted ion beam etching (CAIBE) with HCl and H2/Cl2 gas. Etch rates using CAIBE/HCl were investigated as a function of Ar ion beam energy and substrate temperature. These results were compared to CAIBE/Cl2. Etch rates were also investigated for CAIBE/H2/Cl2 for various ratios of H2:Cl2. Highly anisotropic submicron lines are demonstrated using CAIBE/HCl. Auger electron spectroscopy was used to investigate surface stoichiometric changes of samples etched with CAIBE/HCl, CAIBE/H2/Cl2, and CAIBE/Cl2. The diffusion of deuterium into GaN during etching was also investigated using secondary ion mass spectrometry.

Original languageEnglish (US)
Pages (from-to)825-829
Number of pages5
JournalJournal of Electronic Materials
Issue number5
StatePublished - May 1996



  • Chemically assisted ion beam etching (CAIBE)
  • Dry etching
  • Gallium nitride (GaN)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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