Dry etching of GaN using chemically assisted ion beam etching with HCl and H2/Cl2

A. T. Ping; A. C. Schmitz; M. Asif Khan; I. Adesida

doi:10.1007/BF02666643

Dry etching of GaN using chemically assisted ion beam etching with HCl and H₂/Cl₂

A. T. Ping, A. C. Schmitz, M. Asif Khan, I. Adesida

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The dry etching characteristics of GaN were investigated using chemically assisted ion beam etching (CAIBE) with HCl and H₂/Cl₂ gas. Etch rates using CAIBE/HCl were investigated as a function of Ar ion beam energy and substrate temperature. These results were compared to CAIBE/Cl₂. Etch rates were also investigated for CAIBE/H₂/Cl₂ for various ratios of H₂:Cl₂. Highly anisotropic submicron lines are demonstrated using CAIBE/HCl. Auger electron spectroscopy was used to investigate surface stoichiometric changes of samples etched with CAIBE/HCl, CAIBE/H₂/Cl₂, and CAIBE/Cl₂. The diffusion of deuterium into GaN during etching was also investigated using secondary ion mass spectrometry.

Original language	English (US)
Pages (from-to)	825-829
Number of pages	5
Journal	Journal of Electronic Materials
Volume	25
Issue number	5
DOIs	https://doi.org/10.1007/BF02666643
State	Published - May 1996

Keywords

Chemically assisted ion beam etching (CAIBE)
Dry etching
Gallium nitride (GaN)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Online availability

10.1007/BF02666643

Library availability

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Cite this

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title = "Dry etching of GaN using chemically assisted ion beam etching with HCl and H2/Cl2",

abstract = "The dry etching characteristics of GaN were investigated using chemically assisted ion beam etching (CAIBE) with HCl and H2/Cl2 gas. Etch rates using CAIBE/HCl were investigated as a function of Ar ion beam energy and substrate temperature. These results were compared to CAIBE/Cl2. Etch rates were also investigated for CAIBE/H2/Cl2 for various ratios of H2:Cl2. Highly anisotropic submicron lines are demonstrated using CAIBE/HCl. Auger electron spectroscopy was used to investigate surface stoichiometric changes of samples etched with CAIBE/HCl, CAIBE/H2/Cl2, and CAIBE/Cl2. The diffusion of deuterium into GaN during etching was also investigated using secondary ion mass spectrometry.",

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author = "Ping, {A. T.} and Schmitz, {A. C.} and Khan, {M. Asif} and I. Adesida",

year = "1996",

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T1 - Dry etching of GaN using chemically assisted ion beam etching with HCl and H2/Cl2

AU - Ping, A. T.

AU - Schmitz, A. C.

AU - Khan, M. Asif

AU - Adesida, I.

PY - 1996/5

Y1 - 1996/5

N2 - The dry etching characteristics of GaN were investigated using chemically assisted ion beam etching (CAIBE) with HCl and H2/Cl2 gas. Etch rates using CAIBE/HCl were investigated as a function of Ar ion beam energy and substrate temperature. These results were compared to CAIBE/Cl2. Etch rates were also investigated for CAIBE/H2/Cl2 for various ratios of H2:Cl2. Highly anisotropic submicron lines are demonstrated using CAIBE/HCl. Auger electron spectroscopy was used to investigate surface stoichiometric changes of samples etched with CAIBE/HCl, CAIBE/H2/Cl2, and CAIBE/Cl2. The diffusion of deuterium into GaN during etching was also investigated using secondary ion mass spectrometry.

AB - The dry etching characteristics of GaN were investigated using chemically assisted ion beam etching (CAIBE) with HCl and H2/Cl2 gas. Etch rates using CAIBE/HCl were investigated as a function of Ar ion beam energy and substrate temperature. These results were compared to CAIBE/Cl2. Etch rates were also investigated for CAIBE/H2/Cl2 for various ratios of H2:Cl2. Highly anisotropic submicron lines are demonstrated using CAIBE/HCl. Auger electron spectroscopy was used to investigate surface stoichiometric changes of samples etched with CAIBE/HCl, CAIBE/H2/Cl2, and CAIBE/Cl2. The diffusion of deuterium into GaN during etching was also investigated using secondary ion mass spectrometry.

KW - Chemically assisted ion beam etching (CAIBE)

KW - Dry etching

KW - Gallium nitride (GaN)

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