Dry etching of AlxGa1-xN using chemically assisted ion beam etching

A. T. Ping, M. Asif Khan, I. Adesida

Research output: Contribution to journalArticlepeer-review


The dry etching characteristics of AlxGa1-xN grown by metal-organic chemical vapour deposition have been investigated using chemically assisted ion beam etching with an Ar ion beam and Cl2 gas. Etch rates were investigated as a function of Al composition in AlxGa1-xN ranging from GaN to AIN and as a function of ion beam energy. Anisotropic etched structures with smooth surfaces are demonstrated in Al0.4Ga0.6N layers. Auger electron spectroscopy of etched AlGaN surfaces shows that the stoichiometry is essentially unchanged after etching.

Original languageEnglish (US)
Pages (from-to)133-135
Number of pages3
JournalSemiconductor Science and Technology
Issue number1
StatePublished - Jan 1997
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Dry etching of AlxGa1-xN using chemically assisted ion beam etching'. Together they form a unique fingerprint.

Cite this