Dry etching of AlxGa1-xN using chemically assisted ion beam etching

A. T. Ping; M. Asif Khan; I. Adesida

doi:10.1088/0268-1242/12/1/022

Dry etching of Al_xGa_1-xN using chemically assisted ion beam etching

A. T. Ping, M. Asif Khan, I. Adesida

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Abstract

The dry etching characteristics of Al_xGa_1-xN grown by metal-organic chemical vapour deposition have been investigated using chemically assisted ion beam etching with an Ar ion beam and Cl₂ gas. Etch rates were investigated as a function of Al composition in Al_xGa_1-xN ranging from GaN to AIN and as a function of ion beam energy. Anisotropic etched structures with smooth surfaces are demonstrated in Al_0.4Ga_0.6N layers. Auger electron spectroscopy of etched AlGaN surfaces shows that the stoichiometry is essentially unchanged after etching.

Original language	English (US)
Pages (from-to)	133-135
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	12
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/12/1/022
State	Published - Jan 1 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Dry etching of AlxGa1-xN using chemically assisted ion beam etching",

abstract = "The dry etching characteristics of AlxGa1-xN grown by metal-organic chemical vapour deposition have been investigated using chemically assisted ion beam etching with an Ar ion beam and Cl2 gas. Etch rates were investigated as a function of Al composition in AlxGa1-xN ranging from GaN to AIN and as a function of ion beam energy. Anisotropic etched structures with smooth surfaces are demonstrated in Al0.4Ga0.6N layers. Auger electron spectroscopy of etched AlGaN surfaces shows that the stoichiometry is essentially unchanged after etching.",

author = "Ping, {A. T.} and Khan, {M. Asif} and I. Adesida",

year = "1997",

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doi = "10.1088/0268-1242/12/1/022",

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T1 - Dry etching of AlxGa1-xN using chemically assisted ion beam etching

AU - Ping, A. T.

AU - Khan, M. Asif

AU - Adesida, I.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The dry etching characteristics of AlxGa1-xN grown by metal-organic chemical vapour deposition have been investigated using chemically assisted ion beam etching with an Ar ion beam and Cl2 gas. Etch rates were investigated as a function of Al composition in AlxGa1-xN ranging from GaN to AIN and as a function of ion beam energy. Anisotropic etched structures with smooth surfaces are demonstrated in Al0.4Ga0.6N layers. Auger electron spectroscopy of etched AlGaN surfaces shows that the stoichiometry is essentially unchanged after etching.

AB - The dry etching characteristics of AlxGa1-xN grown by metal-organic chemical vapour deposition have been investigated using chemically assisted ion beam etching with an Ar ion beam and Cl2 gas. Etch rates were investigated as a function of Al composition in AlxGa1-xN ranging from GaN to AIN and as a function of ion beam energy. Anisotropic etched structures with smooth surfaces are demonstrated in Al0.4Ga0.6N layers. Auger electron spectroscopy of etched AlGaN surfaces shows that the stoichiometry is essentially unchanged after etching.

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U2 - 10.1088/0268-1242/12/1/022

DO - 10.1088/0268-1242/12/1/022

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EP - 135

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 1