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DRY DEVELOPMENT OF ION BEAM EXPOSED PMMA RESIST.
I. ADESIDA
, J. D. CHINN
, L. RATHBUN
, E. D. WOLF
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Keyphrases
Poly(methyl methacrylate)
100%
Ion Beam
100%
Dry Development
100%
Etching Rate
66%
Ion Source
33%
High-resolution
33%
Thin-film Silicon
33%
High Brightness
33%
Sub-micrometer
33%
Further Development
33%
Oxygen Plasma
33%
Reactive Ion Etching
33%
Etch Characteristics
33%
Negative Tone
33%
See-through
33%
Material Science
Silicon
100%
Reactive Ion Etching
100%