Drifting-dipole noise (DDN) model of MOSFETs for microwave circuit design

Giang D. Nguyen, Milton Feng

Research output: Contribution to journalArticle

Abstract

Physic-based formulations for the high-frequency noise characteristics of nanometer MOSFETs working at saturation are developed. In the derivation, field-dependent mobility, as well as carrier heating effect in the gradual channel approximation region, is taken into account. In addition, diffusion noise due to velocity saturation carriers in the high electric field region is calculated using Statz's drifting dipole theory. Excellent agreement between the proposed model and experimental noise data for 120-nm MOSFET technology was obtained over device sizes, biases, and frequencies up to 26 GHz. The analytical noise model can be incorporated into any compact model to enable first-pass silicon design of microwave circuit.

Original languageEnglish (US)
Article number5595520
Pages (from-to)3433-3443
Number of pages11
JournalIEEE Transactions on Microwave Theory and Techniques
Volume58
Issue number12 PART 1
DOIs
StatePublished - Dec 1 2010

Keywords

  • Carrier heating
  • drifting dipoles
  • high-field diffusion noise
  • nanometer MOSFET
  • velocity saturation

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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