Abstract
Double quantum well resonant tunnel diodes are demonstrated in InAlAs/InGaAs for the first time. Peak-to-valley ratios of greater than 70:1 at room temperature and 125:1 below 200 K are observed.
Original language | English (US) |
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Pages (from-to) | 1260-1261 |
Number of pages | 2 |
Journal | Applied Physics Letters |
Volume | 57 |
Issue number | 12 |
DOIs | |
State | Published - 1990 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)