Double quantum well resonant tunnel diodes

D. J. Day, Y. Chung, C. Webb, J. N. Eckstein, J. M. Xu, M. Sweeny

Research output: Contribution to journalArticlepeer-review

Abstract

Double quantum well resonant tunnel diodes are demonstrated in InAlAs/InGaAs for the first time. Peak-to-valley ratios of greater than 70:1 at room temperature and 125:1 below 200 K are observed.

Original languageEnglish (US)
Pages (from-to)1260-1261
Number of pages2
JournalApplied Physics Letters
Volume57
Issue number12
DOIs
StatePublished - 1990
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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