Double quantum well resonant tunnel diodes

D. J. Day; Y. Chung; C. Webb; J. N. Eckstein; J. M. Xu; M. Sweeny

doi:10.1063/1.103503

Double quantum well resonant tunnel diodes

D. J. Day, Y. Chung, C. Webb, J. N. Eckstein, J. M. Xu, M. Sweeny

Research output: Contribution to journal › Article › peer-review

Abstract

Double quantum well resonant tunnel diodes are demonstrated in InAlAs/InGaAs for the first time. Peak-to-valley ratios of greater than 70:1 at room temperature and 125:1 below 200 K are observed.

Original language	English (US)
Pages (from-to)	1260-1261
Number of pages	2
Journal	Applied Physics Letters
Volume	57
Issue number	12
DOIs	https://doi.org/10.1063/1.103503
State	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Double quantum well resonant tunnel diodes",

abstract = "Double quantum well resonant tunnel diodes are demonstrated in InAlAs/InGaAs for the first time. Peak-to-valley ratios of greater than 70:1 at room temperature and 125:1 below 200 K are observed.",

author = "Day, {D. J.} and Y. Chung and C. Webb and Eckstein, {J. N.} and Xu, {J. M.} and M. Sweeny",

year = "1990",

doi = "10.1063/1.103503",

language = "English (US)",

volume = "57",

pages = "1260--1261",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - Double quantum well resonant tunnel diodes

AU - Day, D. J.

AU - Chung, Y.

AU - Webb, C.

AU - Eckstein, J. N.

AU - Xu, J. M.

AU - Sweeny, M.

PY - 1990

Y1 - 1990

N2 - Double quantum well resonant tunnel diodes are demonstrated in InAlAs/InGaAs for the first time. Peak-to-valley ratios of greater than 70:1 at room temperature and 125:1 below 200 K are observed.

AB - Double quantum well resonant tunnel diodes are demonstrated in InAlAs/InGaAs for the first time. Peak-to-valley ratios of greater than 70:1 at room temperature and 125:1 below 200 K are observed.

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U2 - 10.1063/1.103503

DO - 10.1063/1.103503

M3 - Article

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EP - 1261

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

ER -

Double quantum well resonant tunnel diodes

Abstract

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