Double-gate FET technology for RF applications: Device characteristics and low noise amplifier design

Karan Bhatia, Keunwoo Kim, Ching Te Chuang, Elyse Rosenbaum, Jean Olivier Plouchart, Brian A. Floyd

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fingerprint

Dive into the research topics of 'Double-gate FET technology for RF applications: Device characteristics and low noise amplifier design'. Together they form a unique fingerprint.