Double-gate FET technology for RF applications: Device characteristics and low noise amplifier design

Karan Bhatia, Keunwoo Kim, Ching Te Chuang, Elyse Rosenbaum, Jean Olivier Plouchart, Brian A. Floyd

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication2006 IEEE international SOI Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages75-76
Number of pages2
ISBN (Print)1424402905, 9781424402908
DOIs
StatePublished - Jan 1 2006
Event2006 IEEE International Silicon on Insulator Conference, SOI - Niagara Falls, NY, United States
Duration: Oct 2 2006Oct 5 2006

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Other

Other2006 IEEE International Silicon on Insulator Conference, SOI
Country/TerritoryUnited States
CityNiagara Falls, NY
Period10/2/0610/5/06

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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