We study a series of the perovskite manganite compounds La1-xCaxMnO3 closely spaced in doping near x=0.50 where the ground state undergoes a doping-dependent metal-insulator transition (MIT) from a metallic to a charge-ordered state. A significant difference is found between the value of x and the Mn+4 fraction which defines the metal-insulator phase boundary. In the immediate doping regime of the MIT, the resistivity data can be quantitatively described by a model based on the coexistence of two carrier types: nearly localized carriers in the charge-ordered state exhibiting variable-range hopping and a parasitic population of free carriers which is tunable by either magnetic field or stoichiometry.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Sep 1 1998|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics