Abstract
We study a series of the perovskite manganite compounds La1-xCaxMnO3 closely spaced in doping near x=0.50 where the ground state undergoes a doping-dependent metal-insulator transition (MIT) from a metallic to a charge-ordered state. A significant difference is found between the value of x and the Mn+4 fraction which defines the metal-insulator phase boundary. In the immediate doping regime of the MIT, the resistivity data can be quantitatively described by a model based on the coexistence of two carrier types: nearly localized carriers in the charge-ordered state exhibiting variable-range hopping and a parasitic population of free carriers which is tunable by either magnetic field or stoichiometry.
Original language | English (US) |
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Pages (from-to) | 5185-5188 |
Number of pages | 4 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 58 |
Issue number | 9 |
DOIs | |
State | Published - 1998 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics