Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors

Y. Huang, J. H. Ryou, R. D. Dupuis, F. Dixon, M. Feng, N. Holonyak, D. Kuciauskas

Research output: Contribution to journalArticlepeer-review

Abstract

We report on the control of functionality in long-wavelength light-emitting transistors (LETs) with an InGaAs single quantum-well embedded in N-InP/p-InAlGaAs/N-InAlAs structures by means of the choice of the doping level and dopant in the p-type base layer. As a dual-functional device, the LET works as a heterojunction bipolar transistor (HBT) with a current gain of ∼45 when the base doping level is ∼2 ×1018 cm-3 using zinc (Zn) as the dopant, and it functions like an efficient light-emitting diode (LED) with a carrier capture efficiency of ∼82 when the base doping is ∼8×1018 cm-3 using carbon (C) as the dopant. The distinctive device performance and functionality of Zn- and C-doped LETs are attributed to the different quantum capture efficiency and carrier lifetime in the quantum well originating from different base doping schemes.

Original languageEnglish (US)
Article number103502
JournalApplied Physics Letters
Volume99
Issue number10
DOIs
StatePublished - Sep 5 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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