Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors

Y. Huang; J. H. Ryou; R. D. Dupuis; F. Dixon; M. Feng; N. Holonyak; D. Kuciauskas

doi:10.1063/1.3633345

Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors

Y. Huang, J. H. Ryou, R. D. Dupuis, F. Dixon, M. Feng, N. Holonyak, D. Kuciauskas

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the control of functionality in long-wavelength light-emitting transistors (LETs) with an InGaAs single quantum-well embedded in N-InP/p-InAlGaAs/N-InAlAs structures by means of the choice of the doping level and dopant in the p-type base layer. As a dual-functional device, the LET works as a heterojunction bipolar transistor (HBT) with a current gain of ∼45 when the base doping level is ∼2 ×10¹⁸ cm^-3 using zinc (Zn) as the dopant, and it functions like an efficient light-emitting diode (LED) with a carrier capture efficiency of ∼82 when the base doping is ∼8×10¹⁸ cm^-3 using carbon (C) as the dopant. The distinctive device performance and functionality of Zn- and C-doped LETs are attributed to the different quantum capture efficiency and carrier lifetime in the quantum well originating from different base doping schemes.

Original language	English (US)
Article number	103502
Journal	Applied Physics Letters
Volume	99
Issue number	10
DOIs	https://doi.org/10.1063/1.3633345
State	Published - Sep 5 2011

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Physics and Astronomy (miscellaneous)

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10.1063/1.3633345

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title = "Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors",

abstract = "We report on the control of functionality in long-wavelength light-emitting transistors (LETs) with an InGaAs single quantum-well embedded in N-InP/p-InAlGaAs/N-InAlAs structures by means of the choice of the doping level and dopant in the p-type base layer. As a dual-functional device, the LET works as a heterojunction bipolar transistor (HBT) with a current gain of ∼45 when the base doping level is ∼2 ×1018 cm-3 using zinc (Zn) as the dopant, and it functions like an efficient light-emitting diode (LED) with a carrier capture efficiency of ∼82 when the base doping is ∼8×1018 cm-3 using carbon (C) as the dopant. The distinctive device performance and functionality of Zn- and C-doped LETs are attributed to the different quantum capture efficiency and carrier lifetime in the quantum well originating from different base doping schemes.",

author = "Y. Huang and Ryou, {J. H.} and Dupuis, {R. D.} and F. Dixon and M. Feng and N. Holonyak and D. Kuciauskas",

note = "Funding Information: The authors are thankful for the support of this work under DARPA under Contract No. HR0011-04-1-0034. D. Kuciauskas was supported by the U.S. DOE under Contract No. DE-AC36-08GO28308 with the National Renewable Energy Laboratory.",

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AU - Huang, Y.

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AU - Dupuis, R. D.

AU - Dixon, F.

AU - Feng, M.

AU - Holonyak, N.

AU - Kuciauskas, D.

N1 - Funding Information: The authors are thankful for the support of this work under DARPA under Contract No. HR0011-04-1-0034. D. Kuciauskas was supported by the U.S. DOE under Contract No. DE-AC36-08GO28308 with the National Renewable Energy Laboratory.

PY - 2011/9/5

Y1 - 2011/9/5

N2 - We report on the control of functionality in long-wavelength light-emitting transistors (LETs) with an InGaAs single quantum-well embedded in N-InP/p-InAlGaAs/N-InAlAs structures by means of the choice of the doping level and dopant in the p-type base layer. As a dual-functional device, the LET works as a heterojunction bipolar transistor (HBT) with a current gain of ∼45 when the base doping level is ∼2 ×1018 cm-3 using zinc (Zn) as the dopant, and it functions like an efficient light-emitting diode (LED) with a carrier capture efficiency of ∼82 when the base doping is ∼8×1018 cm-3 using carbon (C) as the dopant. The distinctive device performance and functionality of Zn- and C-doped LETs are attributed to the different quantum capture efficiency and carrier lifetime in the quantum well originating from different base doping schemes.

AB - We report on the control of functionality in long-wavelength light-emitting transistors (LETs) with an InGaAs single quantum-well embedded in N-InP/p-InAlGaAs/N-InAlAs structures by means of the choice of the doping level and dopant in the p-type base layer. As a dual-functional device, the LET works as a heterojunction bipolar transistor (HBT) with a current gain of ∼45 when the base doping level is ∼2 ×1018 cm-3 using zinc (Zn) as the dopant, and it functions like an efficient light-emitting diode (LED) with a carrier capture efficiency of ∼82 when the base doping is ∼8×1018 cm-3 using carbon (C) as the dopant. The distinctive device performance and functionality of Zn- and C-doped LETs are attributed to the different quantum capture efficiency and carrier lifetime in the quantum well originating from different base doping schemes.

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Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors

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