We report on the control of functionality in long-wavelength light-emitting transistors (LETs) with an InGaAs single quantum-well embedded in N-InP/p-InAlGaAs/N-InAlAs structures by means of the choice of the doping level and dopant in the p-type base layer. As a dual-functional device, the LET works as a heterojunction bipolar transistor (HBT) with a current gain of ∼45 when the base doping level is ∼2 ×1018 cm-3 using zinc (Zn) as the dopant, and it functions like an efficient light-emitting diode (LED) with a carrier capture efficiency of ∼82 when the base doping is ∼8×1018 cm-3 using carbon (C) as the dopant. The distinctive device performance and functionality of Zn- and C-doped LETs are attributed to the different quantum capture efficiency and carrier lifetime in the quantum well originating from different base doping schemes.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)