Doping controlled superconductor-insulator transition in Bi2Sr2-xLaxCaCu2O8+δ

Seongshik Oh, Trevis A. Crane, D. J. Van Harlingen, J. N. Eckstein

Research output: Contribution to journalArticle

Abstract

We show that the doping-controlled superconductor-insulator transition (SIT) in a high critical temperature cuprate system (Bi2Sr2-xLaxCaCu2O8+δ) exhibits a fundamentally different behavior than is expected from conventional SIT. At the critical doping, the sheet resistance seems to diverge in the zero-temperature limit. Above the critical doping, the transport is universally scaled by a two-component conductance model. Below, it continuously evolves from weakly to strongly insulating behavior. The two-component conductance model suggests that a collective electronic phase-separation mechanism may be responsible for this unconventional SIT behavior.

Original languageEnglish (US)
Article number107003
JournalPhysical review letters
Volume96
Issue number10
DOIs
StatePublished - Mar 20 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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