Doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors

D. C. Dumka; G. Cueva; I. Adesida; H. Hier; O. A. Aina

doi:10.1049/el:19991101

Doped multichannel AlAs_0.56Sb_0.44/In_0.53Ga_0.47As field effect transistors

D. C. Dumka, G. Cueva, I. Adesida, H. Hier, O. A. Aina

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Abstract

A depletion-mode doped-channel field effect transistor (DCFET) using an AlAs_0.56Sb_0.44/In_0.53Ga_0.47As heterostructure with multiple channels and a gate-length of 1.0 μm is presented. The device structure is grown by molecular beam epitaxy and consists of three doped In_0.53Ga_0.47As channels separated by undoped AlAs_0.56Sb_0.44 layers. A zero gate-bias saturation current density of 350 mA/mm, extrinsic transconductance as high as 250 mS/mm, a unity current gain cutoff frequency of 18 GHz, and a maximum oscillation frequency of 60 GHz are reported. This multiple channel approach results in wide linearity of the DC and RF performances of the device.

Original language	English (US)
Pages (from-to)	1673-1674
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	19
DOIs	https://doi.org/10.1049/el:19991101
State	Published - Sep 16 1999
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:19991101

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Cite this

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title = "Doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors",

abstract = "A depletion-mode doped-channel field effect transistor (DCFET) using an AlAs0.56Sb0.44/In0.53Ga0.47As heterostructure with multiple channels and a gate-length of 1.0 μm is presented. The device structure is grown by molecular beam epitaxy and consists of three doped In0.53Ga0.47As channels separated by undoped AlAs0.56Sb0.44 layers. A zero gate-bias saturation current density of 350 mA/mm, extrinsic transconductance as high as 250 mS/mm, a unity current gain cutoff frequency of 18 GHz, and a maximum oscillation frequency of 60 GHz are reported. This multiple channel approach results in wide linearity of the DC and RF performances of the device.",

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T1 - Doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors

AU - Dumka, D. C.

AU - Cueva, G.

AU - Adesida, I.

AU - Hier, H.

AU - Aina, O. A.

PY - 1999/9/16

Y1 - 1999/9/16

N2 - A depletion-mode doped-channel field effect transistor (DCFET) using an AlAs0.56Sb0.44/In0.53Ga0.47As heterostructure with multiple channels and a gate-length of 1.0 μm is presented. The device structure is grown by molecular beam epitaxy and consists of three doped In0.53Ga0.47As channels separated by undoped AlAs0.56Sb0.44 layers. A zero gate-bias saturation current density of 350 mA/mm, extrinsic transconductance as high as 250 mS/mm, a unity current gain cutoff frequency of 18 GHz, and a maximum oscillation frequency of 60 GHz are reported. This multiple channel approach results in wide linearity of the DC and RF performances of the device.

AB - A depletion-mode doped-channel field effect transistor (DCFET) using an AlAs0.56Sb0.44/In0.53Ga0.47As heterostructure with multiple channels and a gate-length of 1.0 μm is presented. The device structure is grown by molecular beam epitaxy and consists of three doped In0.53Ga0.47As channels separated by undoped AlAs0.56Sb0.44 layers. A zero gate-bias saturation current density of 350 mA/mm, extrinsic transconductance as high as 250 mS/mm, a unity current gain cutoff frequency of 18 GHz, and a maximum oscillation frequency of 60 GHz are reported. This multiple channel approach results in wide linearity of the DC and RF performances of the device.

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