Doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors

D. C. Dumka, G. Cueva, I. Adesida, H. Hier, O. A. Aina

Research output: Contribution to journalArticlepeer-review


A depletion-mode doped-channel field effect transistor (DCFET) using an AlAs0.56Sb0.44/In0.53Ga0.47As heterostructure with multiple channels and a gate-length of 1.0 μm is presented. The device structure is grown by molecular beam epitaxy and consists of three doped In0.53Ga0.47As channels separated by undoped AlAs0.56Sb0.44 layers. A zero gate-bias saturation current density of 350 mA/mm, extrinsic transconductance as high as 250 mS/mm, a unity current gain cutoff frequency of 18 GHz, and a maximum oscillation frequency of 60 GHz are reported. This multiple channel approach results in wide linearity of the DC and RF performances of the device.

Original languageEnglish (US)
Pages (from-to)1673-1674
Number of pages2
JournalElectronics Letters
Issue number19
StatePublished - Sep 16 1999
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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