Doped mott insulators are insulators: Hole localization in the cuprates

Ting Pong Choy, Philip Phillips

Research output: Contribution to journalArticle

Abstract

We demonstrate that a Mott insulator lightly doped with holes is still an insulator at low temperature even without disorder. Hole localization obtains because the chemical potential lies in a pseudogap which has a vanishing density of states at zero temperature. The energy scale for the pseudogap is set by the nearest-neighbor singlet-triplet splitting. As this energy scale vanishes if transitions, virtual or otherwise, to the upper Hubbard band are not permitted, the fundamental length scale in the pseudogap regime is the average distance between doubly occupied sites. Consequently, the pseudogap is tied to the noncommutativity of the two limits U→ (U the on-site Coulomb repulsion) and L→ (the system size).

Original languageEnglish (US)
Article number196405
JournalPhysical review letters
Volume95
Issue number19
DOIs
StatePublished - Nov 4 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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