Abstract
A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg arc lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.
Original language | English (US) |
---|---|
Pages (from-to) | 282-287 |
Number of pages | 6 |
Journal | Journal of Electronic Materials |
Volume | 27 |
Issue number | 4 |
DOIs | |
State | Published - Apr 1998 |
Externally published | Yes |
Keywords
- Dopant-selective etching
- Gallium nitride (GaN)
- Photoelectrochemical (PEC) etching
- Photoenhanced etching
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry