Dopant-selective photoenhanced wet etching of GaN

C. Youtsey, G. Bulman, I. Adesida

Research output: Contribution to journalArticlepeer-review


A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg arc lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.

Original languageEnglish (US)
Pages (from-to)282-287
Number of pages6
JournalJournal of Electronic Materials
Issue number4
StatePublished - Apr 1998


  • Dopant-selective etching
  • Gallium nitride (GaN)
  • Photoelectrochemical (PEC) etching
  • Photoenhanced etching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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