Dopant-selective photoenhanced wet etching of GaN

C. Youtsey; G. Bulman; I. Adesida

doi:10.1007/s11664-998-0400-0

Dopant-selective photoenhanced wet etching of GaN

C. Youtsey, G. Bulman, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg arc lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.

Original language	English (US)
Pages (from-to)	282-287
Number of pages	6
Journal	Journal of Electronic Materials
Volume	27
Issue number	4
DOIs	https://doi.org/10.1007/s11664-998-0400-0
State	Published - Apr 1998
Externally published	Yes

Keywords

Dopant-selective etching
Gallium nitride (GaN)
Photoelectrochemical (PEC) etching
Photoenhanced etching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Online availability

10.1007/s11664-998-0400-0

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title = "Dopant-selective photoenhanced wet etching of GaN",

abstract = "A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg arc lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.",

keywords = "Dopant-selective etching, Gallium nitride (GaN), Photoelectrochemical (PEC) etching, Photoenhanced etching",

author = "C. Youtsey and G. Bulman and I. Adesida",

note = "The authors are grateful to Q. Chen and J.W. Yang of APA Optics for providing the n-on-i layer structure used in this work. In addition, the authors would like to thank P. Fay, L. Romano, and M. Arafa for their helpful conversations. This research was supported by the National Science Foundation Grant No. ECS 95-21671 and the Defense Advanced Research Projects Agency Grant No. F19628-96-C-0066.",

year = "1998",

month = apr,

doi = "10.1007/s11664-998-0400-0",

language = "English (US)",

volume = "27",

pages = "282--287",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "4",

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TY - JOUR

T1 - Dopant-selective photoenhanced wet etching of GaN

AU - Youtsey, C.

AU - Bulman, G.

AU - Adesida, I.

N1 - The authors are grateful to Q. Chen and J.W. Yang of APA Optics for providing the n-on-i layer structure used in this work. In addition, the authors would like to thank P. Fay, L. Romano, and M. Arafa for their helpful conversations. This research was supported by the National Science Foundation Grant No. ECS 95-21671 and the Defense Advanced Research Projects Agency Grant No. F19628-96-C-0066.

PY - 1998/4

Y1 - 1998/4

N2 - A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg arc lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.

AB - A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg arc lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.

KW - Dopant-selective etching

KW - Gallium nitride (GaN)

KW - Photoelectrochemical (PEC) etching

KW - Photoenhanced etching

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -

Dopant-selective photoenhanced wet etching of GaN

Abstract

Keywords

ASJC Scopus subject areas

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