Dopant redistribution during the solid-phase growth of CrSi2 on Si(100)

A. Rockett, J. E. Greene, H. Jiang, M. Östling, C. S. Petersson

Research output: Contribution to journalArticle

Abstract

The results of an investigation into the redistribution of dopants - As, B, and P - during the solid-phase reaction of Cr with Si substrates to form CrSi2 are presented. Cr layers, 47 nm thick, were evaporated onto B-doped Si substrates which had previously been implanted with one of the three dopants. Two implant doses were investigated for each dopant. Following heat treatment at 500 °C, doping profiles were determined by secondary-ion mass spectrometery (SIMS) and, for arsenic-doped samples, by Rutherford backscattering spectroscopy (RBS). Both SIMS and RBS were also used to measure the extent of silicide formation. The results demonstrate that B and P are transported from the Si substrate to the surface of the growing CrSi2 layer while As accumulates at the CrSi2/Si interface. The silicide formation reaction is shown to be inhibited by large As concentrations. No other dopant-concentration-related effects were observed. A model, based on dopant segregation driven by the relative free energies of CrSi2 and Cr-dopant compounds, is proposed to explain the results.

Original languageEnglish (US)
Pages (from-to)4187-4193
Number of pages7
JournalJournal of Applied Physics
Volume64
Issue number8
DOIs
StatePublished - Dec 1 1988

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Rockett, A., Greene, J. E., Jiang, H., Östling, M., & Petersson, C. S. (1988). Dopant redistribution during the solid-phase growth of CrSi2 on Si(100). Journal of Applied Physics, 64(8), 4187-4193. https://doi.org/10.1063/1.341333